主控MCU
drv8301外围电路
电荷泵
Charge Pump
Because the output stages use N-channel FETs, the device requires a gate-drive voltage higher than the VM power supply to enhance the high-side FETs fully. The DRV8313 integrates a charge-pump circuit that generates a voltage above the VM supply for this purpose.
The charge pump requires two external capacitors for operation. See the block diagram and pin descriptions for details on these capacitors (value, connection, and so forth).
The charge pump shuts down when nSLEEP is active-low